Retraction: “Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer”

In this study, an electron beam excitation laser using a GaInN-based multiquantum well (MQW) active layer was investigated, and laser emission was observed for the first time from a GaInN-based MQW excited by an electron beam. This technology has the potential to provide access to an expanded wavelength region for the laser action of nitride-semiconductor-based lasers from deep UV to infrared.