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Development of a High-Performance 3,300V Silicon Carbide MOSFET
Development of a High-Performance 3,300V Silicon Carbide MOSFET
2018
Leonid Fursin
Xueqing Li
Xing Huang
Ke Zhu
William Simon
Anup Bhalla
Keywords:
High voltage
Composite material
Silicon carbide
Short circuit
MOSFET
Materials science
Optoelectronics
Metallurgy
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