Morphology, Defects and Thermal Stability of SiGe grown on SOI

Qianghua Xie,Mike Kottke,Xiangdong Wang,M. Canonico,Ted R. White,Bich Yen Nguyen,Alex Barr,Shawn G. Thomas,Ran Liu

Morphology, Defects and Thermal Stability of SiGe grown on SOI

2005

Qianghua Xie
Mike Kottke
Xiangdong Wang
M. Canonico
Ted R. White
Bich Yen Nguyen
Alex Barr
Shawn G. Thomas
Ran Liu

SiGe/SOI films have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. For low Ge composition (∼ 20%), strain relaxation in the SiGe layer is minimal (

Keywords:

Raman spectroscopy
Silicon on insulator
Thermal stability
Atomic force microscopy
Analytical chemistry
Transmission electron microscopy
Materials science
Optoelectronics
Morphology (linguistics)
Strain (chemistry)

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