Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions

Electrical properties of a single verticallyoriented n-ZnO nanorod on a p-GaN substrate are investigated by measuring their current-voltage characteristics. The current-voltage characteristics are measured using nanoprobe in the high vacuum chamber of a scanning electron microscope. The observed changes of the resistivity are attributed to the field induced change of the potential barrier at the p-n junction interface.