Device-technological modeling of bipolar transistor with base in the well

Device-technological modeling of bipolar magnetotransistor allows to reduce expenses for design of new updates. Modeling of bipolar magnetotransistor with base in a well has enabled to investigate distribution of charge carriers, currents of electrons and holes in structure of the device. The establishment of connection of electric characteristics with features of distribution of carriers has revealed the concentration- recombination mechanism of sensitivity. The knowledge of the mechanism of sensitivity results in optimization of structure and increase of relative current sensitivity up to 8 T -1 .