Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration

The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.