Strain accommodation through facet matching in La{sub 1.85}Sr{sub 0.15}CuO{sub 4}/Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} ramp-edge junctions

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} and superconducting hole-doped La{sub 1.85}Sr{sub 0.15}CuO{sub 4} thin films, the latter being the top layer. On the ramp, a new growth mode of La{sub 1.85}Sr{sub 0.15}CuO{sub 4} with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.