InSb(111)B-(3×3)表面の核形成と成長

We have investigated processes of structural changes taking place while depositing In onto the InSb(111)B-(2×2) surface by using scanning tunneling microscopy. The results obtained are as follows: Structural changes from the (2×2) to the (3×3) surface at 200oC are mediated by a disordered structure formed during In deposition. However, at a higher temperature of 250oC the (2×2)-(3×3) change directly occurs without the mediation of disordered structure. This suggests that the disordered structure plays a crucial role in relaxing a strain stored in this system during the change at 200oC. Furthermore, at the very early stage of In deposition at 250oC, the (3×3) structure is initiated by assembling three identical rings, presumably resulting in minimizing the number of dangling bond.