Growth of (AlIn)P/GaAs single quantum well structure on (001) GaAs by gas source MBE using AsH3 and PH3 gas

Abstract Observation of photoluminescence at 4.2 K from a lattice-matched (AlIn)P/GaAs single quantum well (SQW) structure grown by gas source MBE was reported for the first time. In this MBE system, a high pressure gas cell of AsH 3 and PH 3 was introduced as a gaseous source for group V. A procedure for switching the group III and V materials is attempted to make the designed SQW structure. As a result, each distinct luminescence peak from all the wells has been observed.