Detector Structures Based onEpitaxial Gallium Arsenide Compensated byChromium

Detector structures basedon VPE GaAs layers, compensated byCratdiffusion process, havebeenstudied atpresent article. Detectors werewithactive region bothn-type andx-type. Itwas shown, thatatstructures basedonn-type layers widthofspace charge region depends onapplied reverse bias. Andcharge collection efficiency froma-particles increased withbias. Instructures basedonx-type layers suchdependence isparticulary absent andcharge collection efficiency isnotchanged. Bothtypes ofstructures hashighcharge collection efficiency from-f-irradiation. Atapplied biasinstructures basedonn-type layers attheprocess ofcharge collection takes partnot only electrons butalso holes.