Semiconductor device and image display device

A semiconductor device and the image display device can be improved and the current characteristics of the source-drain breakdown voltage AC stress resistance, and to obtain desired. For this purpose, a silicon nitride film (2) and a silicon oxide film (3) formed on a glass substrate (1). Is formed on the silicon oxide film (3) comprising a source region (45), a drain region (46), the channel having a predetermined region (40) in the length direction of the channel length, than the impurity concentration of the source region lower GOLD region (41) and an LDD region (43), a lower impurity concentration than the drain region GOLD region (42) and an LDD region (44), a gate insulating film (5) and the gate electrode (6a) of a thin film transistor (T). A gate electrode (6a) the channel region (40) and GOLD region (41, 42) opposite overlap.