High accuracy temperature bipolar modeling for demanding Bandgap application
2007
V DD reduction in advanced CMOS IC's push for reduced temperature stability spread of bipolar based BGR. To achieve this goal, a reliable extraction methodology for I C temperature coefficient is detailed. Based on corner lot measurements, a worst-case bipolar model is built. Bandgap circuit measurements are finally compared to statistical simulations.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
4
Citations
NaN
KQI