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Growth of (10τ3) semipolar GaN on Si substrate with a CrN interlayer by molecular beam epitaxy
Growth of (10τ3) semipolar GaN on Si substrate with a CrN interlayer by molecular beam epitaxy
2009
Kuo-Sheng Liu
Tao-Hung Hsueh
Sheng-Joue Young
Hung Hung
Shi-Xiang Chen
Yung-Feng Chen
S. J. Chang
Keywords:
Substrate (chemistry)
Molecular beam epitaxy
Nanotechnology
Materials science
Molecular physics
si substrate
Correction
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