Integrated circuit copper interconnection structure and preparation method thereof

The invention belongs to the technical field of micro electronics and particularly relates to an integrated circuit copper interconnection structure and a preparation method of the structure. A new Ru-N-Ta structure is provided to replace the traditional TaN/Ta structure to serve as a diffusion barrier layer/adhesion layer/seed crystal layer. A Rux(TaN)y film is prepared with an atomic layer deposition coating method, wherein the value of x and the value of y range from 0.05 to 0.95, and the sum of the x and the y is 1. Good Cu diffusion barrier capacity and adhesion capacity can be achieved through adjustment of the proportion of Ru to TaN. The integrated circuit copper interconnection structure and the preparation method of the structure have the advantages that with the preparation method, an uniform amorphous film can be grown on the high-aspect-ratio structure, the Ru-N-Ta structure is prepared and meanwhile serves as the Cu diffusion barrier layer/adhesion layer/seed crystal layer, and the thickness of the film is greatly reduced; barrier and adhesion performance of Cu can be improved, processing steps are reduced, conductivity of copper interconnection can also be promoted, and a simple, practical and feasible scheme is provided for the copper interconnection technology.