Energy of the Two Variants 11A and 11B in Silicon and Germanium by the Semi‐Empirical Tight‐Binding Method
2002
A semi-empirical tight-binding model was used to study the total energy of Σ = 11 tilt grain boundaries in silicon and germanium. At low temperature the structures A in silicon and B in germanium were found to be more stable in agreement with the experimental results.
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