UV–VIS and mid-IR ellipsometer characterization of layers used in OLED devices

Abstract We report on the analysis of layer materials commonly used for the fabrication of organic light-emitting diodes (OLEDs) by means of spectroscopic ellipsometry operating in the ultraviolet–visible (UV–VIS) and in the mid-infrared (mid-IR) range of the electromagnetic spectrum. On covering a wide spectral range, these non-destructive, non-contact techniques offer a huge potential in characterizing thin films in terms of layer thickness values, optical indices, absorption properties modified by incorporating optically active dopant molecules, and, finally, electrical layer properties. Individual absorption bands of single organic films can significantly affect the luminance and performance efficiency of OLEDs when building multi-layer stacks. Using mid-IR spectroscopic ellipsometry, the resistance of as-deposited and annealed indium–tin oxide (ITO) layers on glass is determined and compared with values obtained by four-point probe techniques.