Nonvolatile three-dimensional semiconductor memory and manufacturing method thereof

The invention discloses a nonvolatile three-dimensional semiconductor memory and a manufacturing method of the nonvolatile three-dimensional semiconductor memory. The nonvolatile three-dimensional semiconductor memory comprises a plurality of three-dimensional NAND memory strings in the vertical direction. Each three-dimensional NAND memory string comprises a horizontal substrate, a cylindrical semiconductor area perpendicular to the substrate, a second electrode, a first electrode, a tunneling dielectric medium, a plurality of independent charge storage layers, blocking dielectric medium layers and control gate electrodes, wherein the second electrode and the first electrode are located on the top and at the bottom of the semiconductor area respectively, the cylindrical semiconductor area is wrapped in the tunneling dielectric medium, the independent charge storage layers are distributed around the tunneling dielectric medium layer in the vertical direction, the tunneling dielectric medium and the charge storage layers are wrapped in the blocking dielectric medium layers, and the control gate electrodes and insulating layers are stacked; the cylindrical semiconductor area comprises source regions, drain regions and channels of a plurality of storage units. Floating gate transistors are adopted as the storage units, the channels are made from sulfur compound materials, fence structures are adopted for the storage units, and the channels, the source regions and the drain regions are made from the same materials, so that a junction-free structure is formed, and the short channel effect is well avoided.