One-Step Sintering of Thermoelectric Conversion Units in the W/TiB2/SiGe and W/MoSi2/SiGe Systems

Dense thermoelectric conversion units in the systems of the W/TiB 2 /SiGe and W/MoSi 2 /SiGe were fabricated in one step by using glass encapsulation HIP. In order to relax the thermal residual stress and prohibit the chemical reaction between the W and SiGe, the electrode was designed as a graded structure through TiB 2 and MoSi 2 interlayers. The electrical resistivity, and their thermal stability were evaluated. The results showed that the SiGe kept the same electrical resistivity as its initial value (about 1.5∼2.0×10 -3 Ω.cm). In the zone of electrode, the electrical resistivity decreased to about 10 -4 Ω.cm. The measurements of electrical resistivity suggested that the combinations of the W/TiB 2 /SiGe for p-type, W/MoSi 2 /SiGe for n-type thermoelectric conversion units were suitable for obtaining optimum and thermally stable electrical resistivity profiles.