Electronic Transport Properties of Crystalline Magneto‐Tunnel Cu/MgO/Cu Junctions

We have modeled the electrical properties of an Cu–MgO–Cu magneto‐tunnel junction (MTJ), using a combination of density functional theory and non‐equilibrium Green’s functions. We have performed calculations for the atomic coordinates perpendicular to the Cu/MgO interface, and report the effect on structure by the thermal disorder. We find that the variations lead to significant differences in current. The current‐voltage relation of the simulating cell is obtained by using the Landauer–Buttiker formula, from which the contact resistance can be determined. Our result contains transmission spectrum and current‐voltage characteristics of Cu‐MgO‐Cu system, shows the shottkey behavior of junction. The modeled structure can be used in electronic swiches ans other sensor devices.