The Dependence of Defect Density in Ge x Si 1−x /Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters

The density of misfit dislocations in Ge x Si 1−x films has been measured as a function of deposition temperature and r-f plasma power in Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD). The misfit dislocation density decreases as the deposition temperature is lowered from 450°C to 410°C. As the plasma power is increased from 6.6 to 16W, the dislocation density peaks at lOW and then decreases with increasing power.