Low-Power Switching in Phase Change Memory using SnTe/Sb 2 Te 3 Superlattice Film

SnTe/Sb 2 Te 3 superlattice material is proposed to achieve low-power switching for phase-change memories. GeTe in well-known GeTe/Sb 2 Te 3 superlattice material was replaced with SnTe. XRD data showed the SnTe(111), SnTe(222), and Sb 2 Te 3 (00x) (x=3, 6, 15) peaks, although the SnSbTe-alloy peaks were greatly dominant. The consumed power for reset was approximately 1/10 ‐ 1/15 compared with that of a Ge 2 Sb 2 Te 5 device, and which was also almost equal to or lower than that of a GeTe/Sb 2 Te 3 superlattice device. The endurance of about 10 5 times was confirmed.