Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

We demonstrate a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. The reverse leakage current improved beyond 10 4 -fold and the breakdown voltage increased from 400 V to 700 V, while the low turn-on voltage (0.8 V) and on-resistance (2 mΩ·cm 2 ) were retained. High-temperature operation up to 250 o C and fast switching performance were also demonstrated. This new device shows great potential for high-power and high-frequency applications.