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Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.
Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.
2008
G. Beylier
D. Benoit
P. Mora
S. Bruyere
G. Ghibaudo
Keywords:
Computer hardware
Data retention
Electronic engineering
Flash memory
Materials science
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