Growth of TiO2 thin film by reactive RF magnetron sputtering using oxygen radical

Abstract TiO 2 thin films were deposited on MgO substrates by reactive RF magnetron sputtering using oxygen radicals. In order to perform the low temperature crystallization and control of crystal structure, the TiO 2 thin film was irradiated by highly reactive oxygen radicals during the deposition. When the distance between the substrate and Ti-metal target (S–T distance) was 90 mm and substrate temperature were kept at 125 °C, the radical irradiated TiO 2 film exhibited a (1 1 0) orientation with rutile structure. The radical irradiated TiO 2 thin film prepared at 300 °C was changed from rutile to anatase structure by the adjustment of S–T distance. When the S–T distance was fixed at 110 mm, the TiO 2 film exhibited a high a -axis orientation with anatase structure. The TiO 2 rutile and anatase thin films consisted of small grains with very smooth surface.