Stato Vegetativo e Stato di Minima Coscienza: elaborazione dei dati da Registro GRACER

In a COC type semiconductor device, a bump electrode of a second semiconductor chip is joined to a first semiconductor chip having a bump electrode formed thereon. The bump electrodes and of the respective first and second semiconductor chips and are both made of first metal such as Au having a relatively high melting point, while a joining portion of these bump electrodes and is formed of an alloy layer of the first metal and second metal, which second metal is made of such a material that can melt at a lower temperature than the melting point of the first metal to be alloyed with it. As a result, in the COC type semiconductor device, when interconnecting a plurality of semiconductor chips, their electrode terminals can be joined to each other without deteriorating the properties of these chips owing to the high temperature applied thereon.