ROLE OF LOCAL TEMPERATURE ON FORMATION OF AS-IMPLANTED DEFECTS

The role of local temperature around a cascade is demonstrated. Calculations show that temperature dependence of heat conductivity has a major influence on types of primary defects. This, in turn, influences thermal path to arrive an annealed structure. Experimental evidence will be given of this effect, say, by implantation into silicon of different thickness. Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA).