Conductance transient spectroscopy of metal‐semiconductor field effect transistors

We have performed conductance deep‐level transient spectroscopy experiments on planar gate structure GaAs MESFETs (metal‐semiconductor field‐effect transistors) using positive and negative filling pulses and, in some cases, under light exposure. We present a simple surface model which accurately describes the main features of the experimental data. We discuss the differences between the predictions of the model and the experimental results.