Dose Response of MOS Transistors Irradiated at Low Temperatures

Jason Dardie,Jérôme Boch,A. Michez,Antoine Touboul,Philippe Girones,Jean-Roch Vaillé,Frédéric Saigné,Francoise Bezerra,Jean-Luc Favre

Dose Response of MOS Transistors Irradiated at Low Temperatures

2019

Jason Dardie
Jérôme Boch
A. Michez
Antoine Touboul
Philippe Girones
Jean-Roch Vaillé
Frédéric Saigné
Francoise Bezerra
Jean-Luc Favre

The effect of dose on MOS transistors is investigated for irradiation performed at low temperatures. Degradation of threshold voltage and drain off-state current is shown and discussed in terms of physical mechanisms.

Keywords:

Optoelectronics
Transistor
Irradiation
Degradation (geology)
Threshold voltage
Materials science

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