Old Web
English
Sign In
Acemap
>
Paper
>
700-V 1.0- Buried Gate SiC-SIT (SiC-BGSIT)
700-V 1.0- Buried Gate SiC-SIT (SiC-BGSIT)
2006
Yasunori Tanaka
Mitsuo Okamoto
Akio Takatsuka
Kazuo Arai
Tsutomu Yatsuo
Koji Yano
Masanobu Kasuga
Keywords:
Electronic engineering
Chemistry
Breakdown voltage
Epitaxy
Time-dependent gate oxide breakdown
Current density
Silicon carbide
Correction
Cite
Save
Machine Reading By IdeaReader
3
References
0
Citations
NaN
KQI
[]