Seeded lateral epitaxial SOI using
1989
Summary form only given. In addition to the traditional advantages of SOI devices, improved subthreshold slope, elimination of kink effect and enhancement in conductance have been reported for thin-film SOI devices. To achieve these characteristics, defect-free and orientation-controlled SOI is needed. In laser recrystallization using seeded lateral epitaxy, this has been achieved by
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
2
Citations
NaN
KQI