A novel single-transistor APS and its comparison with 3T CMOS image sensor

A novel single-transistor configuration active pixel image sensor (APS) has been investigated in this paper. This device can realize the functions of the conventional 3T CMOS image sensor. In this paper, the basic performances including transient simulation, potential changes, and read endurance of the 1T image sensor will be discussed. Different from the conventional 3T CMOS image sensor, holes are used as signal charges in the proposed device. Comparison with the conventional 3T APS will be discussed as well.