Strain relaxation germanium film and a method for manufacturing the same, and a multilayer film structure

On Si (silicon) substrate 2, Ge (germanium) Ge having a defect nuclei while being composed of a plurality of hat clusters 5 formed of crystal grains can be a source of edge dislocations 4 collision portion of the hat cluster 5 to each other dislocation control layer 4, after formation by epitaxial growth, in a low temperature range without the hat cluster 5 is broken, the amorphous germanium layer 7 is formed by epitaxial growth, after an amorphous germanium film 7 was crystallized and further heat-treated by introducing edge dislocations 4 to the defect nucleation source to form a strain relief Ge film 3 strain-relaxed by edge dislocations 4 on the Si substrate 2. The strain relief germanium film 3, the 1μm square range of the interface between the silicon substrate 2, there is a 10μm or less total length of the dislocation lines of 60 ° dislocations. Thus, it is possible to reduce the mosaicity reduce the irregular 60 ° dislocation.