InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation

InGaAsP/InP quantum-wire structures are fabricated by focused Ga ion beam implantation onto InGaAs/InP single quantum well (QW) structures. It is found that InGaAsP layers produced by the intermixing of InGaAs/InP QW's by Ga ion implantation and subsequent thermal annealing are nearly lattice matched to the InP substrate. Fabricated quantum-wire structures exhibit photoluminescence spectra showing a large blue shift, which is induced by the carrier confinement into wire structures and the change of well composition.