Pulsed laser deposition of epitaxial layers of ZnSe

Abstract We study the key parameters for pulsed laser deposition of ZnSe layers on (100) GaAs or (111) CaF 2 substrates. The crystalline and optical properties of these epilayers are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford back scattering (RBS) and by optical spectroscopy. The ZnSe layers obtained are compared to epilayers prepared by metal organic chemical vapor deposition (MOCVD).