Range Profiles of 10 to 380 keV 120Sn and 133Cs in amorphous silicon

Abstract Depth profiles of 120Sn and 133Cs implanted at energies from 10 to 380 keV in amorphized silicon wafers are measured by 4He ion Rutherford backscattering. The obtained projected ranges and projected range stragglings are compared with previous results and with recent universal range-energy calculations. The data for the Sn-Cs pair are also analysed in terms of the Z1-range oscillation effect.