Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress

This work reports on the mechanism of abnormal dynamic on-resistance (dynamic Ron) in AlGaN/GaN high electron mobility transistors (HEMT) under drain stress (V DS , stress). Based on the capacitance change, it is proposed that the defects in GaN/SiN interface have been considered as the main cause of dynamic Ron decreasing. The time constant of charge detrapping at the edge of the gate (access region near the gate) is greater than 0.05s. It is found that field plate can suppress the unstable factors of dynamic Ron by reducing the peak electric field to suppress electron detrapping.