Investigation of ion‐implantation damage with x‐ray double reflection

The lattice parameters of boron‐implanted silicon layers have been measured by an x‐ray diffraction technique. The rocking curves show an expansion volume which anneals in several stages: 100, 280, and 400–600 °C. Around 600 °C, an almost stress‐free crystal is found. This result suggests the formation of defect complexes having a compensating effect on the crystal lattice.