Thermally stimulated currents in epitaxially grown selenium monocrystalline films

Thermally stimulated currents have been measured at liquid‐nitrogen temperature in structures containing a monocrystalline selenium thin film in the (0001) orientation. The results indicate a total trap density of the order of 1020 cm−3. Decayed TSC results suggest trapping energies over a range of values up to 0.16 eV.