Ohmic contact recipe on TixCr2−xO3 and its application to temperature dependent Hall measurements

Ohmic contacts are formed on thin films with different compositions of TixCr2−xO3 (x=0.17, 0.41 and 1.07). The ohmic contacts consists of 10 nm Ti and 50 nm Au, annealed at 1000 °C for 20 min in a N2 atmosphere. The ohmic contacts are suitable in a temperature range from T=35 K to T=373 K. Temperature Hall measurements are done, and the electrical properties of the TiCrO films, as function of composition are found. All layers are n-type, with 1020 cm−3 charge carrier density.