Method for epitaxial growth of wafer-level graphene on 4H/6H-SiC (0001) surface

The invention discloses a method for epitaxial growth of wafer-level graphene on a 4H/6H-SiC (0001) surface. The method mainly solves the problem that based on the prior art, during epitaxial growth of graphene on a 4H/6H-SiC surface, a graphene area is small and graphene uniformity is low. The method comprises the following steps of 1, cleaning a 4H/6H-SiC (0001) surface to remove organic residues and ionic pollutants on the 4H/6H-SiC (0001) surface, 2, feeding hydrogen, and carrying out hydrogen etching of the cleaned 4H/6H-SiC (0001) surface to remove surface scratches so that regular bench-shaped stripes are formed, 3, feeding silane to remove oxides which are formed on the 4H/6H-SiC (0001) surface by the hydrogen etching, and 4, heating in a low-argon pressure environment to evaporate silicon atoms so that carbon atoms are rearranged on the 4H/6H-SiC (0001) surface by a sp2 method to form epitaxial graphene. Graphene obtained by the method has a large area and good uniformity and can be utilized for preparation of a wafer-level epitaxial graphene material.