Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO 2 Dielectric Films
2005
With low temperature and high concentration ozone oxidation, ultra-thin HfO 2 films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance - voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO 2 show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
5
References
0
Citations
NaN
KQI