Vertical magnetoresistive element, an adjustable

The present invention provides a vertical magnetoresistive element an adjustable, including sequentially adjacent reference layer, a barrier layer, a memory layer, a functional layer and an electrode layer; reference layer magnetization direction of the magnetic anisotropy constant, and perpendicular to the surface layer; the barrier layer between the reference layer and the memory layer and respectively positioned adjacent to the memory layer and the reference layer; variable magnetization direction of the memory layer and each of the magnetic anisotropy perpendicular to the surface layer, said memory layer comprises at least a first layer and a second memory sub-sub-layer memory, the first memory sub-layer is a layer of ferromagnetic material and adjacent the barrier layer, the second memory sub-layer is a layer of an amorphous ferromagnetic material and adjacent to the functional layer; the functional layer and the layer adjacent to the memory, which is a layer of material having a lattice structure of NaCl, and the functional layer (100 ) crystal plane parallel to the base plane, [110] crystal direction is slightly larger than the lattice constant bcc-phase Co [100] crystal orientation in the lattice constant.