Ultra shallow Asprofiling before andafter spike annealing using mediumenergyionscattering

Ultra shallow arsenic profiles implanted into Siwith an energy rangefrom0.5to3keVtoadoseof8x 1014 ions/cm2 before andafter spike annealing weremeasured bymedium energy ionscattering (MEIS) withatoroidal electrostatic analyzer (TEA). A shift ofthepeakofarsenic profile tothesurface after spike annealing wasobserved by MEISmeasurement. Mostoftheimplanted arsenic atoms weretrapped inthenative oxide layer after spike annealing.