Single-crystalline Te-hyperdoped silicon via controlling the velocity of ultra-fast cooling during femtosecond-laser irradiation

We implement single-crystalline tellurium (Te)-hyperdoped silicon via controlling the velocity of ultra-fast cooling during femtosecond-laser irradiation, providing a new path of less defective semiconductor hyperdoping, has great potential in applications of low noise semiconductor devices. © 2019 The Author(s)