Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities

Abstract The carrier dynamics in self-assembled InAs/GaAs quantum dots (QDs) has been investigated as a function of the lateral dot density. We investigated the influence of the QD density on the process of carrier transfer among the QDs. We have found evidence that potential barriers at the wetting layer and dot interfaces are responsible to decrease the carrier capture in low density QDs. This effect can be observed on the increased carrier transport.