Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

A novel parameter extraction method is proposed to dissociate the current contributions of each channel in 3D Gate-All-Around multi-channel transistors. These devices, designed for CMOS low standby power architectures, exhibit well behaved characteristics and high performance. Our methodology is based on systematic measurements, numerical simulations and modeling. The substrate bias technique is used to turn ON and OFF the various channels and to remove the bottom channel contribution from the total measured current. Very high I ON /I OFF ratios (NMOS: 2.27 mA/μm for 16 pA/μm; PMOS: 1.32 mA/μm for 16 pA/μm) are obtained experimentally as a benefit from good short-channel mobility values in each type of channel. A mobility reduction is observed in long-channel GAA transistors.