InAlGaAs/AlGaAs Superlattices for Polarized Electron Photocathodes

Highly efficient emitters of polarized electrons based on the InAlGaAs/AlGaAs superlattice give an optimistic prognosis to explorations of such structures as the sources for accelerators. A new set of these SL structures with minimized conduction band offset was designed and recently tested. A new technology of surface protection in MBE growth leads to a significantly reduced heat-cleaning temperature. At these lowered cleaning temperatures, the thermal degradation of the working structure parameters is avoided. As a result a polarization P of up to 91% at corresponding quantum efficiency (QE) of 0.3% was achieved at room temperature.