Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670–810 A/cm2 is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.