Old Web
English
Sign In
Acemap
>
Paper
>
Influence of GaN/HfSiO x interface on electrical properties for GaN/HfSiO x /Pt capacitors
Influence of GaN/HfSiO x interface on electrical properties for GaN/HfSiO x /Pt capacitors
2019
Erika Maeda
Toshihide Nabatame
Masafumi Hirose
Mari Inoue
Akihiko Ohi
Naoki Ikeda
Koji Shiozaki
Hajime Kiyono
Keywords:
Optoelectronics
Capacitor
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]