Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist
2014
EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices below 1X nm
half-pitch. Many efforts have revealed that the effective proton generation and the control of the generated acid diffusion
are required to improve the breakthrough of the RLS trade-off. For the development of EUV resists, the novel protecting
derivatives were designed. To clarify the lithographic performance of these derivatives, we synthesized the acrylic
polymers containing these derivatives as model photopolymers and exposed the resist samples based on these polymers
to EUV/EB radiation. On the basis of the lithographic performances of these resist sample, we evaluated the
characteristics of novel protecting derivatives upon exposure to EUV/EB radiation. We discuss the relationship between
the chemical structures of these derivatives and lithographic performance.
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